Extendibility of High Mobility HfSiON Gate Dielectrics

Seiji Inumiya; Takayoshi Miura; Kiyoshi Shirai; Takeo Matsuki; Kazuyoshi Torii; Yasuo Nara

doi:https://doi.org/10.7567/SSDM.2005.A-1-3

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[A-1-3] Extendibility of High Mobility HfSiON Gate Dielectrics

Seiji Inumiya, Takayoshi Miura, Kiyoshi Shirai, Takeo Matsuki, Kazuyoshi Torii, Yasuo Nara (1.Semiconductor Leading Edge Technologies, Inc. (Selete), 2.Hitachi, Ltd., Central Research Laboratory)

https://doi.org/10.7567/SSDM.2005.A-1-3

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