[A-2-4] NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks

Siddarth A. Krishnan、Manuel Quevedo、Rusty Harris、Paul D. Kirsch、Rino Choi、Byoung Hun Lee、Gennadi Bersuker、Jeff Peterson、Hong-Jyh Li、Chadwin Young、Jack C. Lee (1.SEMATECH、2.TI、3.AMD、4.IBM and、5.Infineon、6.Professor, Electrical Engg. The University of Texas at Austin)

https://doi.org/10.7567/SSDM.2005.A-2-4