[A-2-6] Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States

Motoyuki SATO, Tomonori AOYAMA, Katsuyuki SEKINE, Takeshi YAMAGUCHI, Izumi HIRANO, Kazuhiro EGUCHI, Yoshitaka TSUNASHIMA (1.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation, 2.Research & Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2005.A-2-6