[A-2-6] Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States

Motoyuki SATO、Tomonori AOYAMA、Katsuyuki SEKINE、Takeshi YAMAGUCHI、Izumi HIRANO、Kazuhiro EGUCHI、Yoshitaka TSUNASHIMA (1.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation、2.Research & Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2005.A-2-6