A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors

Rino Choi; B. H. Lee; H. K. Park; C.D. Young; J.H. Sim; S.C. Song; G. Bersuker

doi:https://doi.org/10.7567/SSDM.2005.A-4-2

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[A-4-2] A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors

Rino Choi, B. H. Lee, H. K. Park, C.D. Young, J.H. Sim, S.C. Song, G. Bersuker (1.SEMATECH, 2.IBM assignee, 3.Gwanju Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2005.A-4-2

▲