[A-7-2] Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process

Yoshinori Tsuchiya, Masato Koyama, Junji Koga, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

https://doi.org/10.7567/SSDM.2005.A-7-2