[A-7-3] Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain

Takeo Matsuki、Isamu Nishimura、Yasushi Akasaka、Kiyoshi Hayashi、Masataka Noguchi、Koji Yamashita、Kazuyoshi Torii、Naoki Kasai、Yasuo Nara (1.Research Department 1, Semiconductor Leading Edge Technologies, Inc.、2.Rohm、3.Renesas、4.NEC、5.Sanyo、6.Hitachi)

https://doi.org/10.7567/SSDM.2005.A-7-3