Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric

Yoshiki Kamata; Yuuichi Kamimuta; Tsunehiro Ino; Ryosuke Iijima; Masato Koyama; Akira Nishiyama

doi:https://doi.org/10.7567/SSDM.2005.A-9-1

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[A-9-1] Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric

Yoshiki Kamata、Yuuichi Kamimuta、Tsunehiro Ino、Ryosuke Iijima、Masato Koyama、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2005.A-9-1

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