[B-1-4] Effect of Process Induced Strain in 35 nm FDSOI Devices with Ultra-Thin Silicon Channels

C. Gallon, C. Fenouillet-Beranger, S. Denorme, F. Boeuf, V Fiori, N. Loubet, T. Kormann, M. Broekaart, P. Gouraud, F. Leverd, G. Imbert, C. Chaton, C. Laviron, L. Gabette, F. Vigilant, P. Garnier, H. Bernard, A. Tarnowka, A. Vandooren, R. Pantel, F. Pionnier, S. Jullian, S. Cristoloveanu, T. Skotnicki (1.STMicroelectronics, 2.Philips, 3.Freescale Semiconductors, 4.CEA-LETI, 5.IMEP)

https://doi.org/10.7567/SSDM.2005.B-1-4