[B-1-4] Effect of Process Induced Strain in 35 nm FDSOI Devices with Ultra-Thin Silicon Channels

C. Gallon、C. Fenouillet-Beranger、S. Denorme、F. Boeuf、V Fiori、N. Loubet、T. Kormann、M. Broekaart、P. Gouraud、F. Leverd、G. Imbert、C. Chaton、C. Laviron、L. Gabette、F. Vigilant、P. Garnier、H. Bernard、A. Tarnowka、A. Vandooren、R. Pantel、F. Pionnier、S. Jullian、S. Cristoloveanu、T. Skotnicki (1.STMicroelectronics、2.Philips、3.Freescale Semiconductors、4.CEA-LETI、5.IMEP)

https://doi.org/10.7567/SSDM.2005.B-1-4