[B-1-5] Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs

Tsutomu Tezuka, Shu Nakaharai, Yoshihiko Moriyama, Norio Hirashita, Naoharu Sugiyama, Akihito Tanabe, Koji Usuda, Shin-ichi Takagi (1.MIRAI-ASET, 2.MIRAI-AIST, 3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2005.B-1-5