Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs

Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Norio Hirashita; Naoharu Sugiyama; Akihito Tanabe; Koji Usuda; Shin-ichi Takagi

doi:https://doi.org/10.7567/SSDM.2005.B-1-5

[B-1-5] Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs

Tsutomu Tezuka、Shu Nakaharai、Yoshihiko Moriyama、Norio Hirashita、Naoharu Sugiyama、Akihito Tanabe、Koji Usuda、Shin-ichi Takagi (1.MIRAI-ASET、2.MIRAI-AIST、3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2005.B-1-5

2005 International Conference on Solid State Devices and Materials

[B-1-5] Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs