The Japan Society of Applied Physics

[B-10-2] A High Gain (25%) Strained Silicon Scheme for 65nm High Performance nMOSFETs

T Y Chang, J W Pan, Y C Liu, P W Liu, B C Lan, C H Tsai, T F Chen, C H Tung, C T Huang, C T Tsai, W T Shiau (1.United Microelectronics Corporation (UMC), Central R&D Division)