[B-10-2] A High Gain (25%) Strained Silicon Scheme for 65nm High Performance nMOSFETs

T Y Chang、J W Pan、Y C Liu、P W Liu、B C Lan、C H Tsai、T F Chen、C H Tung、C T Huang、C T Tsai、W T Shiau (1.United Microelectronics Corporation (UMC), Central R&D Division)

https://doi.org/10.7567/SSDM.2005.B-10-2