[B-2-3] Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs

Takamitsu Ishihara、Ken Uchida、Junji Koga、Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation、2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.2005.B-2-3