Fully-depleted ultra narrow (-10 nm) body Gate-All-Around CMOS transistors

Navab Singh; A. Agarwal; L. K. Bera; W.W. Fang; R. Kumar; G. Q. Lo; N. Balasubramanian; D. L. Kwong

doi:https://doi.org/10.7567/SSDM.2005.B-2-6L

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[B-2-6L] Fully-depleted ultra narrow (-10 nm) body Gate-All-Around CMOS transistors

Navab Singh, A. Agarwal, L. K. Bera, W.W. Fang, R. Kumar, G. Q. Lo, N. Balasubramanian, D. L. Kwong (1.Institute of Microelectronics, 2.National University of Singapore.)

https://doi.org/10.7567/SSDM.2005.B-2-6L

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