[B-3-4L] Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement

Doni Januar、Gen Tsutsui、Masumi Saitoh、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.Toshiba Corporation)

https://doi.org/10.7567/SSDM.2005.B-3-4L