[B-5-2] Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate

Kazuhiko Endo, Meishoku Masahara, Yongxun Liu, Takashi Matsukawa, Kenichi Ishii, Etsurou Sugimata, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2005.B-5-2