[B-5-2] Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate

Kazuhiko Endo、Meishoku Masahara、Yongxun Liu、Takashi Matsukawa、Kenichi Ishii、Etsurou Sugimata、Hidenori Takashima、Hiromi Yamauchi、Eiichi Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2005.B-5-2