P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50 nm Channel Length

Krishna K. Bhuwalka; Mathias Born; Markus Schindler; Matthias Schmidt; Torsten Sulima; Ignaz Eisele

doi:https://doi.org/10.7567/SSDM.2005.B-6-4L

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[B-6-4L] P-channel Vertical Tunnel Field-Effect Transistors Down to Sub-50 nm Channel Length

Krishna K. Bhuwalka, Mathias Born, Markus Schindler, Matthias Schmidt, Torsten Sulima, Ignaz Eisele (1.Institute of Physics, Universitat der Bundeswehr)

https://doi.org/10.7567/SSDM.2005.B-6-4L

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