High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique

Shu Nakaharai; Tsutomu Tezuka; Eiji Toyoda; Norio Hirashita; Yoshihiko Moriyama; Tatsuro Maeda; Toshinori Numata; Naoharu Sugiyama; Shin-ichi Takagi

doi:https://doi.org/10.7567/SSDM.2005.B-7-3

[B-7-3] High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique

Shu Nakaharai、Tsutomu Tezuka、Eiji Toyoda、Norio Hirashita、Yoshihiko Moriyama、Tatsuro Maeda、Toshinori Numata、Naoharu Sugiyama、Shin-ichi Takagi (1.MIRAI(ASET)、2.Toshiba Ceramics、3.MIRAI(AIST)、4.The Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2005.B-7-3

2005 International Conference on Solid State Devices and Materials

[B-7-3] High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique