[B-7-3] High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique

Shu Nakaharai, Tsutomu Tezuka, Eiji Toyoda, Norio Hirashita, Yoshihiko Moriyama, Tatsuro Maeda, Toshinori Numata, Naoharu Sugiyama, Shin-ichi Takagi (1.MIRAI(ASET), 2.Toshiba Ceramics, 3.MIRAI(AIST), 4.The Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2005.B-7-3