[B-8-2] Influence of bulk bias on NBTI of pMOSFETs with ultrathin SiON gate dielectric

Shiyang Zhu, Anri Nakajima, Takuo Ohashi, Hideharu Miyake (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Elpida Memory, Inc.)

https://doi.org/10.7567/SSDM.2005.B-8-2