[C-10-1] Analysis of the Origin of the Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 gate stacks

Kenzo Manabe、Kensuke Takahashi、Takashi Hase、Nobuyuki Ikarashi、Makiko Oshida、Toru Tatsumi、Hirohito Watanabe (1.System Devices Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.2005.C-10-1