[C-10-3] Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode

Hokyung Park、Rino Choi、Byoung Hun Lee、Chadwin D. Young、Man Chang、Jack C. Lee、Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology、2.SEMATECH、3.IBM Assignee、4.Advanced Materials Research Center, The University of Texas at Austin)

https://doi.org/10.7567/SSDM.2005.C-10-3