Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFET

S.C. Song; S.H. Bae; J.H. Sim; G. Bersuker; Z. Zhang; P. Kirsch; P. Majhi; N. Moumen; P. Zeitzoff; B.H. Lee

doi:https://doi.org/10.7567/SSDM.2005.C-10-4

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[C-10-4] Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFET

S.C. Song, S.H. Bae, J.H. Sim, G. Bersuker, Z. Zhang, P. Kirsch, P. Majhi, N. Moumen, P. Zeitzoff, B.H. Lee (1.SEMATECH, 2.IBM assignee, 3.Texas Instruments assignee, 4.Intel assignee)

https://doi.org/10.7567/SSDM.2005.C-10-4

▲