The Japan Society of Applied Physics

[C-10-4] Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFET

S.C. Song, S.H. Bae, J.H. Sim, G. Bersuker, Z. Zhang, P. Kirsch, P. Majhi, N. Moumen, P. Zeitzoff, B.H. Lee (1.SEMATECH, 2.IBM assignee, 3.Texas Instruments assignee, 4.Intel assignee)

https://doi.org/10.7567/SSDM.2005.C-10-4