Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFET

S.C. Song; S.H. Bae; J.H. Sim; G. Bersuker; Z. Zhang; P. Kirsch; P. Majhi; N. Moumen; P. Zeitzoff; B.H. Lee

doi:https://doi.org/10.7567/SSDM.2005.C-10-4

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[C-10-4] Highly Manufacturable Hf-silicate Technology with Optimized Composition for Gate-First Metal Gate CMOSFET

S.C. Song、S.H. Bae、J.H. Sim、G. Bersuker、Z. Zhang、P. Kirsch、P. Majhi、N. Moumen、P. Zeitzoff、B.H. Lee (1.SEMATECH、2.IBM assignee、3.Texas Instruments assignee、4.Intel assignee)

https://doi.org/10.7567/SSDM.2005.C-10-4

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