Width Scaling and Layout Variation Effects on Dual Damascene Copper Interconnects Electromigration

M. H. Lin; K. P. Chang; K. C. Su; Tahui Wang

doi:https://doi.org/10.7567/SSDM.2005.C-5-4

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[C-5-4] Width Scaling and Layout Variation Effects on Dual Damascene Copper Interconnects Electromigration

M. H. Lin, K. P. Chang, K. C. Su, Tahui Wang (1.United Microelectronics Corp., 2.Department of Electronics Engineering, National Chiao-Tung University)

https://doi.org/10.7567/SSDM.2005.C-5-4

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