[C-8-2] Buried Epitaxial, Si1-yCy (y = 0.07 %) for the Suppression of Leakage in SPER (550℃ 10 mins) Activated Junctions and Current Drive Enhancement in nMOSFET

Chung Foong Tan、Eng Fong Chor、Hyeokjae Lee、Jinping Liu、Elgin Quek、Lap Chan (1.COE, ECE, National University of Singapore、2.TD, Chartered Semiconductor Manufacturing)

https://doi.org/10.7567/SSDM.2005.C-8-2