[C-8-2] Buried Epitaxial, Si1-yCy (y = 0.07 %) for the Suppression of Leakage in SPER (550℃ 10 mins) Activated Junctions and Current Drive Enhancement in nMOSFET

Chung Foong Tan, Eng Fong Chor, Hyeokjae Lee, Jinping Liu, Elgin Quek, Lap Chan (1.COE, ECE, National University of Singapore, 2.TD, Chartered Semiconductor Manufacturing)

https://doi.org/10.7567/SSDM.2005.C-8-2