[C-9-3] Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

Guk-Hyon Yon、Soo-Jin Hong、Gyoung Ho Buh、Tai-su Park、Yu Gyun Shin、U-In Chung、Joo-Tae Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2005.C-9-3