A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers

S. Balakumar; Fei Gao; S. J. Lee; C.H. Tung; R. Kumar; T. Sudhiranjan; Y.L. Foo; N. Balasubramanian; D.L. Kwong

doi:https://doi.org/10.7567/SSDM.2005.F-4-2

[F-4-2] A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers

S. Balakumar、Fei Gao、S. J. Lee、C.H. Tung、R. Kumar、T. Sudhiranjan、Y.L. Foo、N. Balasubramanian、D.L. Kwong (1.Institute of Microelectronics、2.Silicon Nano Device Lab, Department of ECE, National University of Singapore、3.Institute of Materials Research Engineering)

https://doi.org/10.7567/SSDM.2005.F-4-2

2005 International Conference on Solid State Devices and Materials

[F-4-2] A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers