Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates

So Watanabe; Tsuyoshi Sugisaki; Yohei Toriumi; Motoki Maeda; Kazuo Tsutsui

doi:https://doi.org/10.7567/SSDM.2005.G-1-6

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[G-1-6] Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates

So Watanabe、Tsuyoshi Sugisaki、Yohei Toriumi、Motoki Maeda、Kazuo Tsutsui (1.Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2005.G-1-6

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