High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy

Tohru Kanazawa; Atsushi Morosawa; Masahiro Watanabe; Masahiro Asada

doi:https://doi.org/10.7567/SSDM.2005.G-1-7

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[G-1-7] High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy

Tohru Kanazawa, Atsushi Morosawa, Masahiro Watanabe, Masahiro Asada (1.Tokyo Inst. of Tech., Dept. of Electronics and Applied Physics, 2.SORST, 3.CREST-JST)

https://doi.org/10.7567/SSDM.2005.G-1-7

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