High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy

Tohru Kanazawa; Atsushi Morosawa; Masahiro Watanabe; Masahiro Asada

doi:https://doi.org/10.7567/SSDM.2005.G-1-7

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[G-1-7] High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy

Tohru Kanazawa、Atsushi Morosawa、Masahiro Watanabe、Masahiro Asada (1.Tokyo Inst. of Tech., Dept. of Electronics and Applied Physics、2.SORST、3.CREST-JST)

https://doi.org/10.7567/SSDM.2005.G-1-7

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