Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition

Lorraine Rispal; Yordan Stefanov; Rudolf Heller; Gerhard Tzschockel; Gisela Hess; Klaus Haberle; Udo Schwalke

doi:https://doi.org/10.7567/SSDM.2005.G-7-4

[G-7-4] Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition

Lorraine Rispal, Yordan Stefanov, Rudolf Heller, Gerhard Tzschockel, Gisela Hess, Klaus Haberle, Udo Schwalke (1.Institute for Semiconductor Technology, Darmstadt University of Technology)

https://doi.org/10.7567/SSDM.2005.G-7-4

2005 International Conference on Solid State Devices and Materials

[G-7-4] Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-situ Chemical Vapor Deposition