Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV

Takafumi Kamimura; Kazuhiro Yamamoto; Kazuhiko Matsumoto

doi:https://doi.org/10.7567/SSDM.2005.G-7-5

[G-7-5] Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV

Takafumi Kamimura、Kazuhiro Yamamoto、Kazuhiko Matsumoto (1.Osaka University、2.CREST/JST、3.National Institute of Advanced Industrial Science and Technology)

https://doi.org/10.7567/SSDM.2005.G-7-5

2005 International Conference on Solid State Devices and Materials

[G-7-5] Fermi Level Modulation of n-type Doped Single Walled Carbon Nanotube using Buried Local-Gate FET Structure by Oxygen Ion Implantation with Ultra-low Energy Ion Beam of 25eV