[G-9-4] Transport and Back-Gated Field Effect Characteristics of Si Nanowires Formed by Stress-Limited Oxidation

Ajay Agarwal、Tsung-Yang Liow、R. Kumar、C.H. Tung、N. Balasubramanian、D.L. Kwong (1.Institute of Microelectronics、2.Silicon Nano Device Laboratory, Department of Electrical & Computer Engineering, National University of Singapore)

https://doi.org/10.7567/SSDM.2005.G-9-4