[H-1-3] Application of HfSiON to Deep Trench Capacitors of Sub-45nm Node Embedded DRAM

T. Ando, N. Sato, S. Hiyama, T. Hirano, K. Nagaoka, H. Abe, A. Okuyama, H. Ugajin, K. Tai, S. Fujita, K. Watanabe, R. Katsumata, J. Idebuchi, T. Suzuki, T. Hasegawa, H. Iwamoto, S. Kadomura (1.Semiconductor Technology Development Group, Semiconductor Solutions Network Company, Sony Corporation, 2.SoC R&D Center and, 3.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2005.H-1-3