[H-1-5] Improvement of Retention time by Hydrogen Penetration Slit in DRAM Integration with Triple Metallization

J-H Lee、J-S Park、I-G Kim、T-S Kim、S-H Cheon、A-R Hong、J-M Chang、D-J Kim、J-Y Noh、Y-S Kim、J-S Yoon、K-H Yang、Kyungseok Oh (1.DRAM PA, Samsung Electronics)

https://doi.org/10.7567/SSDM.2005.H-1-5