[H-1-5] Improvement of Retention time by Hydrogen Penetration Slit in DRAM Integration with Triple Metallization

J-H Lee, J-S Park, I-G Kim, T-S Kim, S-H Cheon, A-R Hong, J-M Chang, D-J Kim, J-Y Noh, Y-S Kim, J-S Yoon, K-H Yang, Kyungseok Oh (1.DRAM PA, Samsung Electronics)

https://doi.org/10.7567/SSDM.2005.H-1-5