[H-10-2] Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (SbxSe1-x)

Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Young-Sam Park, Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Matthias Wuttig (1.Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI), 2.Department of Ceramic Engineering, Yonsei University, 3.Physikalisches Institut der RWTH Aachen)

https://doi.org/10.7567/SSDM.2005.H-10-2