[H-10-2] Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (SbxSe1-x)

Sung-Min Yoon、Nam-Yeal Lee、Sang-Ouk Ryu、Kyu-Jeong Choi、Young-Sam Park、Seung-Yun Lee、Byoung-Gon Yu、Myung-Jin Kang、Se-Young Choi、Matthias Wuttig (1.Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)、2.Department of Ceramic Engineering, Yonsei University、3.Physikalisches Institut der RWTH Aachen)

https://doi.org/10.7567/SSDM.2005.H-10-2