[H-2-5] Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory

Jang-Sik Lee、Chang-Seok Kang、Yoo-Cheol Shin、Chang-Hyun Lee、Ki-Tae Park、Jong-Sun Sel、Viena Kim、Byeong-In Choe、Jae-Sung Sim、Jungdal Choi、Kinam Kim (1.Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2005.H-2-5