[H-2-5] Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory

Jang-Sik Lee, Chang-Seok Kang, Yoo-Cheol Shin, Chang-Hyun Lee, Ki-Tae Park, Jong-Sun Sel, Viena Kim, Byeong-In Choe, Jae-Sung Sim, Jungdal Choi, Kinam Kim (1.Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2005.H-2-5