[H-3-2] Highly Reliable and Manufacturable Low-Temperature Plasma Assisted Oxidation for High Density SRAM with Double Stacked Cell Structure

C.-S. Kim、Y. J. Noh、J. H. Kim、B. Y. Koo、J. H. Heo、D.-C. Kim、Y. G. Shin、U-In Chung、J. T. Moon (1.Memory Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2005.H-3-2