Highly Reliable and Manufacturable Low-Temperature Plasma Assisted Oxidation for High Density SRAM with Double Stacked Cell Structure

C.-S. Kim; Y. J. Noh; J. H. Kim; B. Y. Koo; J. H. Heo; D.-C. Kim; Y. G. Shin; U-In Chung; J. T. Moon

doi:https://doi.org/10.7567/SSDM.2005.H-3-2

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[H-3-2] Highly Reliable and Manufacturable Low-Temperature Plasma Assisted Oxidation for High Density SRAM with Double Stacked Cell Structure

C.-S. Kim, Y. J. Noh, J. H. Kim, B. Y. Koo, J. H. Heo, D.-C. Kim, Y. G. Shin, U-In Chung, J. T. Moon (1.Memory Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2005.H-3-2

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