Highly Reliable 0.15μm/14F2 Cell FRAM Capacitor using SrRuO3 Buffer Layer

J.E. Heo; B.J. Bae; D.C. Yoo; S.D. Nam; J.E. Lim; D.H. Im; S.O. Park; H.S. Kim; U.I. Chung; J.T. Moon

doi:https://doi.org/10.7567/SSDM.2005.H-7-2

2005 International Conference on Solid State Devices and Materials

Sep 12, 2005 - Sep 15, 2005
International Conference Center Kobe, Kobe, Japan

[H-7-2] Highly Reliable 0.15μm/14F2 Cell FRAM Capacitor using SrRuO3 Buffer Layer

J.E. Heo, B.J. Bae, D.C. Yoo, S.D. Nam, J.E. Lim, D.H. Im, S.O. Park, H.S. Kim, U.I. Chung, J.T. Moon (1.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2005.H-7-2

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