Highly Reliable 0.15μm/14F2 Cell FRAM Capacitor using SrRuO3 Buffer Layer

J.E. Heo; B.J. Bae; D.C. Yoo; S.D. Nam; J.E. Lim; D.H. Im; S.O. Park; H.S. Kim; U.I. Chung; J.T. Moon

doi:https://doi.org/10.7567/SSDM.2005.H-7-2

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜 2005年9月15日
International Conference Center Kobe, Kobe, Japan

[H-7-2] Highly Reliable 0.15μm/14F2 Cell FRAM Capacitor using SrRuO3 Buffer Layer

J.E. Heo、B.J. Bae、D.C. Yoo、S.D. Nam、J.E. Lim、D.H. Im、S.O. Park、H.S. Kim、U.I. Chung、J.T. Moon (1.Process Development Team, Semiconductor R&D Division, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2005.H-7-2

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